Radiofrequency transistors based on high-purity carbon nanotube arrays

Most next generation wireless communication technologies require integrated radiofrequency devices that can operate at frequencies greater than 90 GHz. Two of the semiconductors most widely used to fabricate radiofrequency devices are silicon complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) and transistors based on III-V compound semiconductors, particularly GaAs.

Newspaleti Newspaleti
Jul 9, 2021 - 03:15
Radiofrequency transistors based on high-purity carbon nanotube arrays
Most next generation wireless communication technologies require integrated radiofrequency devices that can operate at frequencies greater than 90 GHz. Two of the semiconductors most widely used to fabricate radiofrequency devices are silicon complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) and transistors based on III-V compound semiconductors, particularly GaAs.
Read More On TechXplore