Researcher develop high-performance amorphous p-type oxide semiconductor
Researchers have collaborated on the development of a tellurium-selenium composite oxide semiconductor material. Their efforts led to the successful creation of a high-performance and highly stable p-type thin-film transistor (TFT). The research has been published online in Nature.
Newspaleti 
Researchers have collaborated on the development of a tellurium-selenium composite oxide semiconductor material. Their efforts led to the successful creation of a high-performance and highly stable p-type thin-film transistor (TFT). The research has been published online in Nature.
